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| SUD40N04-10A New Product Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V ID (A)a 40 40 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD40N04-10A S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 40a 40a 100 30 45 71c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec. Junction-to-Ambientd Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. Surface mounted on 1" FR4 board. Document Number: 71420 S-03269--Rev. A, 26-Mar-01 www.vishay.com Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W C/W 1 SUD40N04-10A Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V, TJ = 125_C VDS = 32 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A, TJ = 125_C Drain-Source On-State Resistancea VGS = 10 V, ID = 40 A, TJ = 175_C rDS(on) VGS = 4.5 V, ID = 10 A VGS = 4.5 V, ID = 10 A, TJ = 125_C VGS = 4.5 V, ID = 10 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 40 A 20 40 0.0075 0.012 0.015 0.011 0.018 0.022 40 0.010 0.016 0.020 0.014 0.022 0.028 S W 40 1 3 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr Timec td(off) tf VDD = 20 V, RL = 0.5 W ID ] 40 A, VGEN = 10 V, RG = 2.5 W VDS = 20 V, VGS = 10 V, ID = 40 A VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 370 145 35 6 8 14 7.5 30 14 30 15 60 30 ns nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = 40 A, VGS = 0 V IF = 40 A, di/dt = 100 A/ms 1.0 30 40 A 100 1.50 60 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71420 S-03269--Rev. A, 26-Mar-01 SUD40N04-10A New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 6 V 5V 80 I D - Drain Current (A) 100 Vishay Siliconix Transfer Characteristics I D - Drain Current (A) 90 60 60 4V 40 TC = 125_C 20 25_C 0 30 3V 0 0 2 4 6 8 10 -55_C 3 4 5 6 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C g fs - Transconductance (S) 60 25_C 125_C 40 r DS(on) - On-Resistance ( ) 0.025 0.030 On-Resistance vs. Drain Current 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 20 0.005 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 3000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) Ciss 16 VGS = 20 V ID = 40 A 2000 12 1500 8 1000 Coss 500 Crss 0 8 16 24 32 40 4 0 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71420 S-03269--Rev. A, 26-Mar-01 www.vishay.com 3 SUD40N04-10A Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 50 1000 Limited by rDS(on) 100 I D - Drain Current (A) 10 ms 100 ms 10 1 ms 10 ms 100 ms dc Safe Operating Area 40 I D - Drain Current (A) 30 20 10 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71420 S-03269--Rev. A, 26-Mar-01 4 |
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